http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101072342-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1409 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101072342-B1 |
| titleOfInvention | Slurry Compositions for Chemical Mechanical Polishing of Copper |
| abstract | The present invention provides a slurry composition for CMP of copper, containing an abrasive, oxidizing agent, complexing agent, antioxidant, and amine-based pH adjusting agent in the form of colloidal particles.n n n The present invention relates to an abrasive having a colloidal particle form of 0.5 to 20% by weight, 0.05 to 20% by weight of oxidizing agent, 0.1 to 5% by weight of complexing agent, 0.001 to 1.0% by weight of antioxidant, and amine-based A slurry composition for CMP of copper is provided that contains a pH adjusting agent and water such that the total weight of the total composition is 100% by weight.n n n The slurry of the present invention has excellent polishing rate for copper films, excellent selectivity of copper for oxides and tantalum nitride, and as a result, excellent production yield for copper wiring, and dispersibility of the slurry by using fine colloidal silica particles. This is excellent. In addition, by controlling the corrosion rate of copper wiring, it reduces dishing and lotion, and has excellent stability for long-term use. n n n Copper, CMP, Slurry, Tantalum Nitride |
| priorityDate | 2003-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.