http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101072034-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 |
filingDate | 2009-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2011-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2011-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101072034-B1 |
titleOfInvention | Semiconductor light emitting device and manufacturing method thereof |
abstract | The embodiment relates to a semiconductor light emitting device and a method of manufacturing the same.n n n A semiconductor light emitting device according to an embodiment includes a light emitting structure including a plurality of compound semiconductor layers; An electrode on the compound semiconductor layer; A reflective layer under the compound semiconductor layer; A conductive support member under the reflective layer; And a light transmissive channel layer around a lower surface of the compound semiconductor layer.n n n n Semiconductor, Light Emitting Device, Vertical |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101906851-B1 |
priorityDate | 2009-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.