http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101070953-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2010-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101070953-B1 |
| titleOfInvention | Dielectric film comprising silicon and method of manufacturing same |
| abstract | The present invention describes a method of forming a dielectric film, including, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, wherein the dielectric film exhibits one or more of the following properties: Wet etch resistance; Dielectric constants less than 6.0; And / or resistance to high temperature rapid thermal annealing processes. The invention also discloses a method of forming a dielectric film or coating on a subject to be processed, such as a semiconductor wafer. |
| priorityDate | 2009-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.