| abstract |
A hilllock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein the two Al layers are barrier Al layers formed on the substrate, and pure Al formed on the barrier Al layers. Layer. The barrier Al layer may be an aluminum nitride (AlNx) layer, an aluminum oxide (AlOx) layer, an aluminum oxide-nitride (AlOxNy) layer, or an Al—Nd alloy layer. In addition, the pure Al layer is physically thicker than the barrier Al layer in order to effectively prevent the occurrence of hillock and the like. |