| abstract |
The method 300 for forming the ruthenium metal layer 560 includes a patterned substrate 25, 125, 500 having one or more vias, trenches, or a combination thereof, processing chambers 10, 110 of the deposition system 1, 100. ), A process of depositing the first ruthenium metal layer 540 on the substrates 25, 125, and 500 by atomic layer deposition, and the first ruthenium metal layer 540 by thermal chemical vapor deposition. And depositing a second ruthenium metal layer 550. The deposited ruthenium metal layer 560 can be used as a diffusion barrier layer, a seed layer for electroplating, or two layers.n n n n Ruthenium metal layer, diffusion barrier, seed layer, patterned substrate, atomic layer deposition, thermal chemical vapor deposition |