http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101067296-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101067296-B1 |
| titleOfInvention | Manufacturing method of nitride light emitting device |
| abstract | The present invention discloses a method in which the ohmic characteristics of an n-type electrode can be greatly improved while maintaining a good light extraction efficiency in a method of manufacturing a semiconductor light emitting device. In the method of manufacturing a semiconductor light emitting device comprising an n-type semiconductor layer, an active layer and a p-type semiconductor layer having a rough surface sequentially stacked on a substrate, the n-type semiconductor layer, active layer and p on the substrate Forming a semiconductor semiconductor layer in sequence, forming a mesa etching masking pattern on the p-type semiconductor layer, applying a planarization material to the mesa etching masking pattern, and an entire upper surface of the p-type semiconductor layer to planarize it; And exposing the partial region of the n-type semiconductor layer by performing the mesa etching by dry etching, and forming an n-type electrode on the exposed portion of the n-type semiconductor layer. n n Semiconductor light emitting device, light extraction efficiency |
| priorityDate | 2009-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.