http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101064284-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2004-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101064284-B1
titleOfInvention Contact hole formation method of semiconductor device
abstract The present invention relates to a method for forming a contact hole in a semiconductor device, and in manufacturing a device in which a super-contact hole serving as a pad and a normal-contact hole serving as a general wiring connection exist simultaneously in a packaging process, Is formed first, and the wafer is slowly rotated up, down, left and right, and the super-contact hole is filled with BARC, and the photoresist pattern for the normal-contact hole is formed on the entire structure including the super-contact hole filled with BARC, followed by the etching process. Since a contact hole is formed and a photoresist removal process is performed thereafter, two types of contact holes can be easily formed on one wafer without an additional process such as a planarization process due to poor coating in the super-contact hole. . n n n n Super contact hole, normal contact hole, packaging, up, down, left and right
priorityDate 2004-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020058429-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069

Total number of triples: 15.