http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101064091-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2009-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101064091-B1 |
| titleOfInvention | Semiconductor light emitting device and manufacturing method thereof |
| abstract | The embodiment relates to a semiconductor light emitting device and a method of manufacturing the same.n n n A semiconductor light emitting device according to an embodiment includes a light emitting structure including a plurality of Group III-V compound semiconductor layers; A second electrode layer under the light emitting structure; A conductive support member having a difference of 5 or less from the thermal expansion coefficient of the compound semiconductor is included under the second electrode layer.n n n n n Semiconductor, light emitting device, support member, thermal expansion coefficient |
| priorityDate | 2009-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.