| abstract |
The present invention provides a method of forming a semiconductor nanostructure on a dielectric substrate by chemical vapor deposition (CVD). The method according to the invention comprises forming an island-shaped stable first semiconductor nucleus 14 on a dielectric substrate 12, wherein the nucleus 14 is formed in the dielectric substrate 12. Forming CVD from the precursor 11 of the first semiconductor, and forming second semiconductor nanostructures 16A, 16B from the stable first semiconductor nucleus 14. Forming by CVD from a precursor 21 selected for selective deposition onto the nucleus 14.n n n The invention further provides such nanostructures as well as devices comprising nanostructures formed according to any one of the methods of the invention. |