http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101056244-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2008-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101056244-B1 |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, and the present invention for realizing this is sequentially deposited first pad oxide film, pad nitride film and second pad oxide film on a semiconductor substrate and etching process using a photo process and reactive ion etching process Forming a trench of an active region and an STI, depositing a liner nitride film in the second pad oxide film and the trench of the STI by LP-CVD, depositing a liner high temperature oxide film on the liner nitride film, Liner high temperature oxide film, liner nitride film, second oxide film, pad nitride film and first pad oxide film deposited on the top layer on the semiconductor substrate by the step of filling the gap fill insulating material and planarizing the CMP process by HDP method and wet process on the liner high temperature oxide film. Etching sequentially to form an STI.n n n According to the present invention, by depositing a liner nitride film and a liner high temperature oxide film, there is an advantage of effectively reducing stress in the STI region by preventing plasma damage during gap fill by the HDP process.n n n n STI, HDP, Liner Nitride, Liner High Temperature Oxide |
| priorityDate | 2008-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.