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filingDate 2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101054984-B1
titleOfInvention Light emitting device, light emitting device manufacturing method and light emitting device package
abstract The light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, a second conductive semiconductor layer formed on the active layer, a superlattice layer formed on the second conductive semiconductor layer, and A light emitting structure including a third conductive semiconductor layer formed on the superlattice layer; A translucent electrode layer formed on the light emitting structure; A first electrode connected to the first conductive semiconductor layer; A second electrode electrically connected to the light transmitting electrode layer on the light emitting structure; And a light-transmitting insulating layer under the second electrode.
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