http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101048637-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-02881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-2698 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-2437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-041 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-00 |
| filingDate | 2007-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101048637-B1 |
| titleOfInvention | Apparatus and method for quantitative evaluation of atomic vacancy present in silicon wafer |
| abstract | By forming a thin film oscillator that has been optimized on the surface of the silicon sample, the quantitative evaluation apparatus for atomic vacancy existing in the wafer which can be quantitatively evaluated without accelerating the concentration of atomic vacancy in the silicon wafer, etc. To provide. Magnetic force generating means (2) for applying an external magnetic field to the silicon sample (5) cut out a predetermined portion from the silicon wafer, and a temperature control means (3) capable of cooling and controlling the silicon sample (5) at a temperature range of 50 K or less. Ultrasonic oscillation / detecting means 4 which oscillates ultrasonic pulses against the surface of the silicon sample 5, propagates the oscillated ultrasonic pulses in the silicon sample 5, and detects the change in the sound velocity of the propagated ultrasonic pulses. And directly forming on the surface of the silicon sample 5 a thin film vibrator 8 having physical properties capable of following the expansion of the silicon sample 5 in the temperature range and having the C-axis aligned in a predetermined direction. Characterized in that made. |
| priorityDate | 2006-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.