http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101043410-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate | 2009-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101043410-B1 |
| titleOfInvention | Semiconductor memory device and manufacturing method thereof |
| abstract | The present invention provides a semiconductor memory device and a method of manufacturing the same that can prevent interference between two neighboring unit cells in a highly integrated semiconductor memory device including a unit cell composed of a floating body transistor, thereby improving operation reliability. A semiconductor memory device according to the present invention includes a plurality of unit cells formed in one active region and an insulating wall bisecting source / drain regions shared by the plurality of unit cells.n n n n Oxide film, bit line contact, interference |
| priorityDate | 2009-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.