http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101043009-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101043009-B1 |
| titleOfInvention | Method and apparatus for forming silicon dot and method and apparatus for forming substrate with silicon dot and insulating film |
| abstract | The present invention suppresses defects, aggregation and plasma damage of silicon dots at a relatively low temperature to form silicon dots with good controllability of particle diameter and good reproducibility between substrates. Further, under relatively low temperatures, the silicon dots and the insulating film are formed with good reproducibility between the substrates with good controllability of the silicon dot particle diameter and controllability of the insulating film thickness. The low inductance internal antennas 12 and 22 generate an inductively coupled plasma from the silicon dot forming gas (insulating film forming gas), and the silicon dots SiD (insulating film F) are formed on the substrate S under the inductively coupled plasma. While the plasma is in an unstable state, the substrate S is not exposed to the unstable plasma, and when the plasma is stabilized, the substrate S is directed toward the stabilized plasma to form silicon dots (insulating film formation). A method and apparatus 1 for forming a silicon dot to start (method and apparatus A for forming a silicon dot and a substrate with an insulating film). |
| priorityDate | 2006-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.