http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101039574-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate | 2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101039574-B1 |
| titleOfInvention | Organic semiconducting coaxial ｎ-ｎ junction structure nanocables, optoelectronic devices and organic semiconducting coaxial ｎ-ｎ junction structure nanocables |
| abstract | The present invention relates to an organic semiconducting coaxial pn junction structure nanocable forming a pn junction structure of a core layer and a shell layer, wherein the core layer is represented by the compound represented by Formula 1 and Formula 2 Provided is an organic semiconducting coaxial pn junction structure nanocable comprising one or more selected from the group consisting of compounds. The organic semiconducting coaxial pn junction structure nanocable according to the present invention blends an organic monomolecular semiconductor material with strong self-assembly ability into a nanocable and a soluble polymer material having a semiconductor property of opposite polarity complementary thereto. By including an electroconductive charge transfer type pn junction charge transfer layer generated in the middle, it can be usefully applied to a variety of opto-electronic devices because of its excellent electrical and luminescent properties. In addition, the present invention suggests that a nanocable having excellent electrical and luminescent properties can be manufactured by simple blending of the two materials at room temperature.n n n n Semiconductor, p-n junction, core layer, shell layer, p-depletion layer, n-depletion layer, nano cable |
| priorityDate | 2008-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.