http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101038767-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101038767-B1 |
| titleOfInvention | Nitride Semiconductor Single Crystal Thin Film Forming Apparatus and Method |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for fabricating a semiconductor light emitting device using a neutral particle beam. It is possible to lower the temperature of the substrate relatively much by providing a part of the reaction energy by the kinetic energy of the neutral particle beam, rather than providing the reaction energy by thermal energy by heating. The neutral particle beam contains the inert element Ar, which contains nitrogen in the reactants and is not reactive but provides significant amounts of momentum and kinetic energy. In addition, Ga, Al, In, etc., the Group 3 solid elements required for the reaction are sprayed onto the substrate in the process chamber through the solid element generating source to form the nitride semiconductor single crystal thin film directly by the neutral particle beam even at a substrate temperature of about 600 ° C. In addition, elements such as Si and Mg, which are solid elements required for doping, may also be doped by spraying onto a substrate through a solid element generating source for doping.n n n According to the present invention, it is possible to manufacture a semiconductor light emitting device having excellent light emitting characteristics relatively easily by preventing degradation of the substrate and the thin film and preventing the unwanted diffusion of the doping elements by lowering the substrate temperature.n n n n Semiconductor light emitting device, nitride semiconductor single crystal thin film, neutral particle beam, LED, low temperature deposition |
| priorityDate | 2009-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.