http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101036803-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate | 2009-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2011-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-101036803-B1 |
titleOfInvention | Resist for electron beam lithography and developing method for resist for electron beam lithography |
abstract | The present invention relates to a resist for electron beam lithography excellent in sensitivity and resolution for an electron beam and a method for developing the resist for electron beam lithography. The resist for electron beam lithography according to the present invention includes a copolymer having a number average molecular weight of 500 to 30,000 formed by copolymerizing a compound of Formula 1, a compound of Formula 2 and a compound of Formula 3.n n n <Formula 1> <Formula 2> <Formula 3>n n n n n n n n n n n Lithography, Negative, Resist, Copolymerization |
priorityDate | 2009-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.