http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101030244-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2004-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101030244-B1 |
| titleOfInvention | Manufacturing method of low dielectric constant insulating film |
| abstract | The present invention relates to a method for producing a low dielectric constant insulating film on a semiconductor or an electric circuit, including the use of an incompletely condensed polyhedral oligomeric silsesquioxane of the formula for the preparation of a film, and a low dielectric constant insulating film produced by the method.n n n [(R a X b SiO l.5 ) m (R c Y d SiO) n ]n n n In the above formulas,n n n a and b are 0 to 1, c and d are 1, the sum of m and n is 3 or more, the sum of a and b is 1, n and m are 1 or more,n n n R is a hydrogen atom or a substituted or unsubstituted alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, respectively,n n n X is defined above as oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group, or substituent X A substituent R containing at least one of the groups,n n n Y is hydroxyl, alkoxy or a substituent of formula 0-SiZ 1 Z 2 Z 3 , wherein Z 1 , Z 2 and Z 3 are the same or different and are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate , Methacrylate or nitrile group, or substituent R,n n n Substituents R are the same or different, respectively, and substituents X and Y are the same or different, respectively,n n n The formula [(R a X b SiO l.5 ) m (R c Y d SiO) n ] contains, as substituent Y, one or more hydroxyl groups.n n n Semiconductor, low dielectric constant insulating film, oligomeric silsesquioxane |
| priorityDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.