http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101028220-B1

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filingDate 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77134d41980fda67a5551f9c7d3ac850
publicationDate 2011-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101028220-B1
titleOfInvention Light emitting device, light emitting device manufacturing method and light emitting device package
abstract The light emitting device according to the embodiment includes a reflection layer; A light emitting structure for generating light including a second conductive semiconductor layer formed on the reflective layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer formed on the active layer; And an electrode on the first conductivity type semiconductor layer, wherein a distance between the active layer and the reflective layer is formed to satisfy 2 · Φ1 + Φ3 = N · 2π ± Δ, (0 ≦ Δ ≦ π / 2), Here, φ1 represents a phase change when light in a vertical direction passes through the second conductive semiconductor layer, Φ3 represents a phase change when the light is reflected by the reflective layer, and N is a natural number. to be.
priorityDate 2010-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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