http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101027225-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate | 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101027225-B1 |
| titleOfInvention | Ultraviolet light receiving element |
| abstract | An ultraviolet light-receiving element using a group III nitride semiconductor, wherein the ultraviolet light-receiving element with high light receiving sensitivity is provided. By irradiating light with energy larger than the bandgap energy of the undoped layer 44, electrons are excited from the valence band to the conduction band 61 by the depleted layer, thereby generating an electron-hole pair. The band structure is changed by the generated electron-hole pairs, whereby an energy lower than the pseudo pseudo Fermi level 62 is generated at the interface between the undoped layer 43 and the undoped layer 44, Two-dimensional electron gas 63 is formed. Since this two-dimensional electron gas 63 acts as a channel, a large current flows by applying a voltage between the drain electrode 46 and the source electrode 7. |
| priorityDate | 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.