http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101026382-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101026382-B1 |
| titleOfInvention | Device Separating Method of Semiconductor Device |
| abstract | According to the present invention, the method includes sequentially forming a tunnel insulating film, a floating gate, and a pad nitride film on a semiconductor substrate, forming a trench in an isolation region of the semiconductor substrate, forming a liner insulating film on sidewalls of the trench, and forming a trench. Forming an insulating film on the resultant so that the insulating film is buried, etching the insulating film and the liner insulating film to recess a portion of the side of the floating gate, etching the insulating film and recessing it below the surface of the semiconductor substrate, and Forming a capping layer on the gate side and the insulating layer, and etching the capping layer to implement a hemispherical device isolation layer shape.n n n n Flash Memory, SA-STI, Isolation, Gap Fill, Interference, Disturbance, SOD |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.