http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101017926-B1

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filingDate 2010-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4fdc2c4ba239f98044df7e58118da6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b907b63f4dd7a2d119006679d46756a8
publicationDate 2011-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101017926-B1
titleOfInvention Manufacturing Method of Silicon Carbide Sintered Body
abstract The present invention relates to a method for producing a dense silicon carbide sintered body in a non-oxidizing atmosphere, in detail, by effectively removing the silicon oxide film present on the surface of the silicon carbide particles without generating CO x (1≤x≤2) gas during sintering The present invention relates to a method for producing a silicon carbide sintered body having excellent antiballistic properties with a porosity of 1% or less within a short time at low temperature.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160123042-A
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priorityDate 2010-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.