http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101015695-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61P31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00 |
| filingDate | 2003-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101015695-B1 |
| titleOfInvention | Thermal activation method of fluorine for semiconductor chamber |
| abstract | The present invention relates to a method and system for thermal activation of an oxidizing cleaning gas used in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the oxidizing cleaning gas with a heated inert gas. The resulting thermally activated oxidizing cleaning gas is not easily deactivated, so the cleaning performance is improved. |
| priorityDate | 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.