http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101011934-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02645 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2003-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101011934-B1 |
| titleOfInvention | Nitride Semiconductors and Semiconductor Devices |
| abstract | A nitride semiconductor having a wide low defect region on its surface and a semiconductor device using the same are provided. Moreover, the manufacturing method of the nitride semiconductor which can easily reduce surface defect in the layer formation process using a horizontal growth technique, and the manufacturing method of the semiconductor element manufactured using this are provided. On the substrate, a seed crystal part is formed in a stripe pattern through a buffer layer. Next, crystals are grown from the seed crystal part under the growth conditions of two stages to form a nitride semiconductor layer. In the first step, a low temperature growth part having a trapezoidal cross section in the layer thickness direction is formed at a growth temperature of 1030 ° C., and in the second step, lateral growth is dominant at a growth temperature of 1070 ° C. to form a high temperature growth part between the low temperature growth parts. do. As a result, the surface of the nitride semiconductor layer is reduced in hillocks and normal lattice defects above the low temperature growth portion. n n Seed crystal part, nitride semiconductor layer, low temperature growth part, high temperature growth part |
| priorityDate | 2002-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.