| abstract |
The present invention relates to a method for producing a dielectric thin film containing atoms of Si, C, O and H (hereinafter referred to as SiCOH), the prior art not exposed to the deep ultra-violet (DUV) of the invention Disclosed is a method for producing a SiCOH dielectric thin film having improved insulation as compared to a dielectric thin film of the prior art including SiCOH dielectric thin film. Improved insulation involves reducing leakage current without adversely affecting the dielectric constant. According to the present invention, the SiCOH dielectric thin film exhibiting reduced leakage current and improved reliability can be obtained by performing an ultraviolet-ray annealing on the deposited SiCOH dielectric thin film. The DUV laser annealing step of the present invention reduces leakage current by easily removing weakly bound C.n n n n Dielectric Thin Film, Annealed, Ultraviolet |