http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101004335-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101004335-B1 |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | The present invention relates to a method for forming a metal wiring of a semiconductor device, the idea of the present invention is to form an interlayer insulating film on a semiconductor substrate on which the metal wiring is formed, patterning it to form a via hole; Sequentially forming an adhesive layer and a metal seed layer on the entire upper surface of the resultant; Forming a metallization trench by forming a photoresist pattern on a predetermined region of the resultant; Forming a metal material under the via hole and the metal wiring trench by performing an electroplating method on the lower portion of the metal wiring trench and the copper seed layer formed in the via hole to form vias and metal wirings; And removing the photoresist pattern to complete formation of vias and metal lines. Therefore, the degree of surface roughness of the uppermost metal material embedded in the via hole and the metal wiring trench is increased, thereby improving the electron mobility characteristics of the metal wiring and the via. n n n n Vias, metallization |
| priorityDate | 2003-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 |
Total number of triples: 14.