http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101002474-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101002474-B1 |
| titleOfInvention | Device Separation Method of Semiconductor Memory Device |
| abstract | The present invention relates to a method of forming a device isolation film of a semiconductor memory device, comprising: forming a tunnel insulating film and a charge storage layer on a semiconductor substrate; and etching the charge storage layer, the tunnel insulating film and the semiconductor substrate to form a trench for device isolation. Forming a protective film on the entire structure including the device isolation trench, forming a first insulating film on a bottom surface of the device isolation trench, and oxidizing the protective film in the first insulating film formation step. A method of forming a device isolation film of a semiconductor memory device, the method comprising removing a portion of the semiconductor layer and forming a second insulating film on the entire structure including the first insulating film.n n n n Nitride, HDP, Device Separator |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.