http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101002271-B1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
filingDate 2003-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101002271-B1
titleOfInvention Gallium Nitride Compound Semiconductor Device
abstract The LED which mainly emits light in wavelength 375nm or less is disclosed. The LED is formed on the substrate 10 by the GaN layer 16, the n-clad layer 20, the AlInGaN buffer layer 22, the light emitting layer 24, the p-clad layer 26, the p electrode 30, and the n electrode ( 32). The light emitting layer 24 is a multilayer quantum well (MQW) structure in which an InGaN well layer and an AlInGaN barrier layer are stacked. The quantum well structure extends the effective band gap of the InGaN well layer to shorten the light emission wavelength. In addition, by using the AlInGaN buffer layer 22 as the lower layer of the light emitting layer 24, electrons are efficiently injected into the light emitting layer 24, thereby increasing the light emitting efficiency.n n n n Gallium nitride compound, semiconductor device
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160019622-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102191213-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140123410-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013180388-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102212561-B1
priorityDate 2002-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559169
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858

Total number of triples: 28.