http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100996675-B1

Outgoing Links

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filingDate 2009-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100996675-B1
titleOfInvention Thermoelectric Nanowires and Manufacturing Method Thereof
abstract According to the present invention, a thermoelectric nanowire manufactured by stacking an oxide layer having a different thermal expansion coefficient and a thermoelectric material on a substrate and growing single crystal thermoelectric nanowires from the thermoelectric material by using a compressive stress according to a difference in the thermal expansion coefficient is prepared. It is about.n n n The present invention,n n n Providing a substrate having an oxide layer formed on an upper surface thereof; Forming a plurality of nanoparticles made of Al, Ag, Fe, or an oxide thereof on the oxide layer; Forming a thermoelectric thin film having thermoelectric properties on the oxide layer to include the plurality of nanoparticles formed on the oxide layer; Heat-treating the substrate on which the thermoelectric material thin film is formed to grow thermoelectric nanowires containing the plurality of nanoparticles; And cooling the substrate at room temperature after the heat treatment process. It provides a thermoelectric nanowire manufacturing method comprising a.n n n n Thermoelectric nanowires, thermoelectric materials, oxide layers, thermoelectric properties, nanoparticles, coefficient of thermal expansion, thermal conductivity, performance index (ZT)
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101590695-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180058881-A
priorityDate 2009-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 30.