http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100995223-B1
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F17-02 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F17-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
filingDate | 2003-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2010-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2010-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100995223-B1 |
titleOfInvention | Method for producing a metallocene compound |
abstract | The present invention relates to Group VIII (VIII) metallocene or metallocene-like compounds which utilize, in cyclopentadienide or cyclopentadienide-like salts, compounds with a Cp 'anion as present, together with a counterion. It relates to a method for producing. In one embodiment, the method reacts a metal salt, a Cp compound (eg, substituted or unsubstituted cyclopentadiene or indene) with a ligand (L) to form an intermediate compound, which intermediate compound is a Cp 'compound, For example with a cyclopentadienide or cyclopentadienide-like salt, wherein the metal salt may be a halide or nitrate of ruthenium, osmium or iron, and L is an electron pair donor. Unsubstituted, mono- and symmetrically or asymmetrically di- or polysubstituted metallocenes or metallocene-like compounds can be prepared. In another embodiment, an unsubstituted or symmetrically substituted metallocene is formed by reacting MX 2 (PPh 3 ) m , wherein m is 3 or 4, with a Cp 'compound. The method can be used to prepare precursors for chemical vapor deposition of thin films.n n n n Metallocene, cyclopentadiene, cyclopentadienide, chemical vapor deposition method. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160006491-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220095457-A |
priorityDate | 2002-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 105.