http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100990935-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-03 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100990935-B1 |
| titleOfInvention | Capacitor Manufacturing Method of Semiconductor Device |
| abstract | The present invention discloses a capacitor manufacturing method of a semiconductor device. A capacitor manufacturing method of the disclosed invention comprises the steps of forming an interlayer insulating film on a silicon substrate having a transistor structure; Selectively removing the interlayer insulating film to form a contact hole exposing the transistor structure; Forming a lower electrode pattern made of polysilicon on the interlayer insulating layer including the contact hole; Forming an ONO thin film including a nitrided first oxide film, a nitride film, and a nitrided second oxide film on the lower electrode pattern; And forming an upper electrode pattern on the ONO thin film. |
| priorityDate | 2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 14.