http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100988692-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B2005-3996 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3909 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-3929 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15 |
| filingDate | 2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100988692-B1 |
| titleOfInvention | Magnetoresistive element and method and apparatus for manufacturing same |
| abstract | The present invention relates to a method of manufacturing a magnetoresistive element comprising a magnetizing pin layer, a magnetizing free layer, and an insulating layer provided between the magnetizing pin layer and the magnetizing free layer and a spacer layer having a current path through the insulating layer. The process of constructing the spacer layer in the method comprises the steps of: depositing a first metal layer forming a current path, depositing a second metal layer to be converted into an insulating layer on the first metal layer, an ion beam of rare gas, or Performing a pretreatment of irradiating the second metal layer with the RF plasma, and converting the second metal layer into the insulating layer by supplying an oxidizing gas or a nitriding gas.n n n n Method for manufacturing magnetoresistive element, magnetization fin layer, magnetization free layer, spacer layer, film forming step of first metal layer, film forming step of second metal layer, supplying oxidizing gas or nitride gas |
| priorityDate | 2004-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.