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filingDate 2009-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100982387-B1
titleOfInvention Bottom chassis for thin film transistor type liquid crystal display device and manufacturing method thereof
abstract A bottom chassis for housing a backlight unit of a thin film transistor type liquid crystal display device and a method of manufacturing the same will be described.n n n The bottom chassis for a thin film transistor type liquid crystal display device according to the present invention is carbon (C): 0.001 to 0.1% by weight, silicon (Si): 0.002 to 0.05% by weight, manganese (Mn): 0.28 to 2.0% by weight, chromium ( Cr): 0.01 to 0.03% by weight, molybdenum (Mo): 0.001 to 0.004% by weight and an inner layer formed of a high tensile strength steel sheet containing residual iron (Fe) and other unavoidable impurities; An electrogalvanized layer formed on the inner layer; And a polymer chromium free antifouling layer formed on the electro zinc plating layer, wherein the inner layer, the electro zinc plating layer, and the entire chromium free antifouling layer are 0.5 to 0.9 mm in thickness.n n n The bottom chassis for a thin film transistor type liquid crystal display device according to the present invention has a relatively thin thickness compared to a conventional bottom chassis to achieve light weight and slimness, and an anti-pollution layer is formed on an outer surface of the operator during product assembly. It has contamination resistance to fingerprints and contaminants, and does not contain chromium, which does not adversely affect the environment.
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