Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-20 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
filingDate |
2004-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2010-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-100977905-B1 |
titleOfInvention |
Photoactive Components Including Organic Layers |
abstract |
The present invention relates to photoactive components, in particular solar cells, composed of an organic layer and formed by one or more stacked pi, ni, and / or pin diodes. The diode is characterized in that it comprises at least one p-doped transport layer or n-doped transport layer having an optical bandgap larger than the photoactive layer. Individual diodes are characterized by high internal quantum yields, but can be optically thin (peak absorption <80%). According to the present invention, high external quantum yields are obtained by using light traps to enlarge the optical path of incident light in a diode or by stacking a number of such diodes, the transition between the two diodes being for the purpose of improved recombination and generation. Is facilitated by a transition layer. Both forms of embodiments have a number of specific advantages using doped transport layers with large bandgap. |
priorityDate |
2003-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |