| abstract |
SUMMARY OF THE INVENTION The present invention is to provide a structure of a semiconductor device that realizes low power consumption even when a large screen is formed, and a method of manufacturing the same. An insulating layer 101 is formed and embedded wirings (Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof), and the surface of the insulating layer is planarized, and then a metal protective film (Ti, TiN, Ta, TaN, etc.) is formed on the exposed portion. The buried wiring is used for a part of various wirings (gate line, source line, power supply line, common line, etc.) of a light emitting device or a liquid crystal display device to reduce the resistance.n n n n Light emitting device, liquid crystal display, buried wiring, gate line, source line, power supply line |