http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100973259-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-153 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 |
| filingDate | 2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100973259-B1 |
| titleOfInvention | Vertical Gallium Nitride LED Devices with Side Reflectors and Manufacturing Method Thereof |
| abstract | The present invention relates to a vertical structure gallium nitride-based LED device and a method of manufacturing the same. Vertical structure gallium nitride-based LED device according to the present invention comprises an N-type electrode; A gallium nitride-based LED structure having an N-type gallium nitride layer, an active layer, and a P-type gallium nitride layer sequentially formed below the N-type electrode; A lower reflector formed under the LED structure and having at least one region in contact with the P-type gallium nitride layer and formed of a material that reflects light; A side reflector formed to extend from the lower reflector to cover the side surface of the gallium nitride based LED structure at a predetermined distance from the lower reflector, and to be spaced apart from the lower to the upper side, the reflector being made of a material that reflects light; And a dummy substrate formed under the lower reflector and the side reflector. Through this, the lower reflector and the side reflector may be formed on the gallium nitride based LED structure to increase luminous efficiency and improve light diffusion characteristics. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021245389-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2595684-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2590744-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2590744-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021245386-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022164168-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021245387-A1 |
| priorityDate | 2008-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.