http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100968425-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100968425-B1 |
| titleOfInvention | Method of manufacturing semiconductor device |
| abstract | The present invention relates to a method of manufacturing a semiconductor device capable of alleviating stress generated during the formation of a capacitor of a semiconductor device. The method of manufacturing a semiconductor device according to the present invention includes the steps of forming a storage node contact plug. Forming a barrier metal layer on the storage node contact plug, forming an ohmic contact layer between the storage node contact plug and the barrier metal layer through a first heat treatment, and alleviating stress generated when the ohmic contact layer is formed. And forming a lower electrode of the capacitor on the ohmic contact layer, and according to the present invention, the stress generated during the formation of the capacitor of the semiconductor device is relieved. The refresh characteristics of the device can be improved.n n n n Capacitor, Stress, Rapid Heat Treatment, Furnace Heat Treatment |
| priorityDate | 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.