http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100968420-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2003-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100968420-B1 |
| titleOfInvention | Tungsten contamination removal method of semiconductor device using tungsten / polysilicon gate |
| abstract | According to an embodiment of the present invention, polysilicon for forming a gate electrode, WN and W are sequentially deposited on a semiconductor substrate, a hard mask is formed thereon, and the hard mask and the gate electrode layer are patterned into a predetermined gate pattern. And selectively oxidizing the sidewalls exposed W, polysilicon, and the substrate to recover the gate edge damage received by the etching during the patterning, and forming a gate buzz beak at the lower edge of the gate polysilicon. Removing the contaminated substrate surface using a sulfuric acid or hydrofluoric acid chemical solution or a combination of sulfuric acid and hydrofluoric acid chemical solution, and the front surface of the substrate on which the patterned gate structure is formed to prevent abnormal oxidation of W in a subsequent process. Forming a gate sealing nitride film on the patterned gate structure; Forming a low temperature plasma enhanced silicon nitride film so as to be cheap, and forming a silicon nitride film by low temperature chemical vapor deposition with excellent oxidation resistance on the low temperature plasma enhanced silicon nitride film. Provided is a method for removing tungsten contamination from a semiconductor device. The present invention prevents the W outgassing caused by the pre-deposition process of the gate sealing nitride film by the subsequent high temperature LPCVD method, and then deposits the gate sealing nitride film to fundamentally block the W contaminated on the silicon surface to be caused by the W contamination. By eliminating the deterioration and junction leakage of the gate oxide film, the DRAM semiconductor device maximizes data storage capability and improves refresh time.n n n n W, Tungsten, Gate Sealing Nitride, Plasma Enhanced Silicon Nitride |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11362031-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784122-B2 |
| priorityDate | 2003-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.