http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100960180-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T436-25 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2003-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100960180-B1 |
| titleOfInvention | Computer-readable recording medium recording heat treatment method, heat treatment device, control device and control program |
| abstract | The present invention relates to a heat treatment method comprising a step of heating a plurality of zones of a heat treatment atmosphere in a reaction vessel by a plurality of heating means, and a step of introducing a processing gas into the reaction vessel to form a thin film on a plurality of substrate surfaces. The heat treatment step group includes a first heat treatment step using a plurality of first substrates in which the processing gas consumption is smaller than that of the product substrate, a first measurement step of measuring the film thickness of each thin film for each zone, and each of the film thicknesses A first setting step of setting a temperature set value of each of the heating means so as to be a target value, a second heat treatment step of using the temperature set value for a plurality of second substrates in which the amount of processing gas consumption is greater than that of the first substrate, and a second substrate And a second measuring step of measuring the film thickness of the thin film formed on the surface of each of the plurality of zones, and correcting the temperature set values of each of the plurality of heating means. The can with the respective temperature set values of the correction and a third heat treatment step of performing the heat treatment process group for a plurality of product substrate second correction step, a.n n n n Heat treatment, semiconductor wafer, oxidation treatment, process gas, temperature setpoint, reaction vessel |
| priorityDate | 2002-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.