http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100959949-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-0884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133305
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1343
filingDate 2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100959949-B1
titleOfInvention How to Form a Transparent Conductive Pattern on a Flexible Substrate
abstract The present invention relates to a method of forming a transparent conductive pattern on a flexible substrate, and since the crystallization of the transparent conductive film by irradiating ultraviolet rays at room temperature, the effect on the flexible substrate can be reduced, so that the moisture permeability can be increased. .n n n In addition, since the grain is grown in one direction and crystallized by ultraviolet irradiation, the resistance value may be low, thereby improving the characteristics of the transparent conductive film.n n n In addition, the present invention has the effect of forming a moisture barrier film on the flexible substrate, the surface treatment of the moisture barrier film to improve the bonding strength of the moisture barrier film and the SiON film to increase the moisture vapor transmission rate.n n n In addition, the present invention provides an ion beam assisted deposition (IBAD) of a SiON film on a flexible substrate and a transparent conductive film in an opposing target sputtering device capable of low temperature processing, thereby preventing the peeling phenomenon due to the difference in thermal expansion coefficient. There is an effect that can be reduced.n n n n Transparent electrode, low temperature, surface treatment, facing, ion, ultraviolet ray, crystal
priorityDate 2008-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20050003234-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100647702-B1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID447604988
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14806
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID162028862
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559192
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID454387746
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57350325

Total number of triples: 22.