http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100957013-B1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate | 2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-100957013-B1 |
titleOfInvention | Method of manufacturing semiconductor thin film |
abstract | The present invention relates to a method of manufacturing a semiconductor thin film, comprising the steps of forming a liquid semiconductor layer on a substrate, and selectively applying heat to a predetermined region on the liquid semiconductor layer, the liquid semiconductor for the region to which the heat is applied Drying the layer to form a semiconductor thin film; and removing the liquid semiconductor layer remaining in an area other than the region where the semiconductor thin film is formed by using an organic solvent, thereby eliminating the need for a separate mask. Since the semiconductor thin film can be deposited on, the cost and time required for the process can be reduced.n n n n Liquid semiconductor, thin film formation process, selective heat application, organic solvent, display |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012099325-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012099325-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101145903-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362116-B2 |
priorityDate | 2008-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.