http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100955368-B1

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filingDate 2003-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100955368-B1
titleOfInvention How to measure the breakdown voltage of semiconductor epitaxial wafers and semiconductor epitaxial wafers
abstract Provided are a method for measuring the breakdown voltage of semiconductor epitaxial wafers that can be easily measured, and a semiconductor epitaxial wafer having excellent breakdown voltage. In the method for measuring the breakdown voltage of the semiconductor epitaxial wafer 10 according to the present invention, the breakdown voltage between the electrodes 14 and 18 is measured only by the Schottky electrode, without the need for an ohmic electrode. Therefore, since the process of forming the ohmic electrode is omitted, the semiconductor epitaxial wafer 10 can be easily provided for the breakdown voltage measurement test. Thereby, the breakdown voltage measurement of the semiconductor epitaxial wafer 10 can be easily performed. In addition, the loss can be reduced as compared with the conventional measuring method of measuring the inter-electrode withstand voltage V2 after actual device fabrication from the wafer 10.
priorityDate 2002-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.