| abstract |
A capacitor and a wiring structure for silicon carbide having an oxide film, a dielectric film, and a second oxide film on the dielectric film are provided. The thickness of the oxide films is about 0.5 to about 33 percent of the thickness of the oxide films and the dielectric film. In addition, a capacitor and a wiring structure for silicon carbide having a silicon oxynitride film as the dielectric structure are provided. Such dielectric structures can be interposed between metal layers to provide metal-insulator-metal capacitors or used as intermetal dielectrics for wiring structures to provide devices and structures with improved average failure life. Also provided are methods of making such capacitors and structures.n n n n Capacitors, Silicon Carbide |