| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3298
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3418 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-457 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22F3-10 |
| filingDate |
2006-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2010-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100948557-B1 |
| titleOfInvention |
SnO₂-based sputtering target and its manufacturing method |
| abstract |
The present invention provides a high-performance sputtering target capable of forming a sputtering film having both a high specific density and a low specific resistance and a high transmittance at a high film formation rate while preventing abnormal discharge and generation of particles.n n n This sputtering target contains SnO 2 as a main component and contains 1.15 to 10 mass% of Nb 2 O 5 and Ta 2 O 5 in a total amount, and the content mass ratio of Nb 2 O 5 / Ta 2 O 5 is 0.15 to 0.90. And a sintered compact formed at 1550 to 1650 ° C.n n n SnO₂-based sputtering target, sputter film |
| priorityDate |
2005-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |