http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100946036-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100946036-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention relates to a method for manufacturing a semiconductor device, comprising the steps of: providing a semiconductor substrate having a contact plug penetrating an interlayer insulating film and connected to a junction region of a transistor; Forming a barrier metal film on the contact plug and the interlayer insulating film; Forming an amorphous metal silicide layer on the barrier metal film; Forming a PVD tungsten film on the amorphous metal silicide layer; Forming a CVD tungsten film on the PVD tungsten film; And sequentially etching the CVD tungsten film, the PVD tungsten film, the amorphous metal silicide layer, and the barrier metal film.n n n n Metal wiring, tungsten, resistivity, amorphous WSix, PVD tungsten film, CVD tungsten film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812329-B2 |
| priorityDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.