http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100944937-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100944937-B1 |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | On the substrate on which the source and drain are formed, an oxide film is formed by a chemical method, followed by NH 3 or N 2 plasma treatment to form nitrogen oxide film by doping nitrogen into the oxide film. Then, cobalt is deposited on the nitride oxide layer using an organometallic chemical vapor deposition method, followed by heat treatment to form cobalt silicide, wherein the lattice of cobalt silicide formed produces epitaxial growth consistent with the lattice of silicon.n n n n Cobalt, silicide, CVD, plasma treatment, nitrogen, doping, SiOxNy, heat treatment, buffer film, buffer layer, diffusion rate, epitaxial, porous |
| priorityDate | 2008-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.