| abstract |
In the semiconductor integrated circuit device for forming embedded wirings by an inlaid method on an interlayer insulating film including an SiOF film, the interface separation between the etching stopper layer and the SiOF film used for forming the interconnection interconnection trench is prevented. When the Cu wiring 33 is buried in the interconnection trench 32 formed by dry etching the interlayer insulating film including the SiOF films 26 and 29 by the inlaid method, The free F generated in the SiOF film 26 is trapped by the silicon oxynitride film 27 with the silicon oxynitride film 27 interposed between the silicon film 28 and the SiOF film 26.n n n n Inlaid method, embedding, wiring, groove, peeling |