http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100940270-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2008-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100940270-B1 |
| titleOfInvention | Extreme ultraviolet lithography mask and method for forming the same. |
| abstract | A multilayer reflective layer formed on the substrate to reflect the extreme ultraviolet light, an absorbing layer pattern formed on the multilayer reflective layer to selectively expose the multilayer reflective layer, and reflection of the extreme ultraviolet light formed on the sidewall of the absorbing layer pattern and irradiated to the multilayer reflective layer. A mask for extreme ultraviolet lithography comprising an increasing reflective spacer is provided.n n n n Extreme UV, Lithography, Light Intensity, Contrast, Reflectivity |
| priorityDate | 2008-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.