http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100939161-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2003-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100939161-B1 |
| titleOfInvention | Device Separation Method of Semiconductor Device |
| abstract | In the method of manufacturing a device isolation film of a semiconductor device according to the present invention, a method of sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate, and forming a photoresist pattern on the pad nitride film to expose a predetermined portion as a device isolation region. And performing an anisotropic etching process using the photoresist pattern as a mask to etch the pad nitride film by a predetermined thickness, and performing an isotropic etching process using the photoresist pattern as a mask, to form a pad oxide film in a portion intended as the device isolation region. Etching the remaining pad nitride layer so as to expose the photoresist, removing the photoresist pattern, etching the exposed pad oxide layer and a semiconductor substrate below the mask using the pad nitride layer as a mask to form a trench; A gapfill oxide film filling the trench Performing step and the planarizing step of forming the front and characterized by exposing the pad oxide film. |
| priorityDate | 2003-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.