http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100938611-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
| filingDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100938611-B1 |
| titleOfInvention | Method for manufacturing semiconductor device and semiconductor device |
| abstract | An object of the present invention is to provide a semiconductor device manufacturing method capable of producing a semiconductor device having a semiconductor layer having a high carrier transport capacity, a semiconductor device manufactured by the semiconductor device manufacturing method, an electronic device comprising the semiconductor device, And an electronic device having high reliability. This object is achieved by the following invention. The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device having an anode (3), a cathode (5), and a hole transport layer (41) provided between the anode (3) and the cathode (5). A first step of forming a layer 41 'mainly composed of a hole transporting material having a polymerizable group X on one surface side of the cathode surface 5 and one surface side of the cathode 5, and a layer on the anode 3 side ( 41 ') and the layer 41' on the cathode 5 side are in contact with each other, the hole transporting material is polymerized by a polymerization reaction of their polymerizable groups, thereby integrating the two layers 41 'with each other. And a second step of obtaining the hole transport layer 41.n n n n Method for manufacturing semiconductor device, semiconductor device, electronic device, electronic device |
| priorityDate | 2005-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 232.